unisonic technologies co., ltd 2SD882 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2005 unisonic technologies co., ltd qw-r209-003,c medium power low voltage transistor features * high current output up to 3a * low saturation voltage * complement to 2sb772 applications * audio power amplifier * dc-dc convertor * voltage regulator to-126c 1 to-126 1 to-252 1 1 to-251 1 to-92nl *pb-free plating product number: 2SD882l ordering information order number pin assignment normal lead free plating package 1 2 3 packing 2SD882-x-t60-k 2SD882l-x-t60-k to-126 e c b bulk 2SD882-x-t6c-k 2SD882l-x-t6c-k to-126c e c b bulk 2SD882-x-tm3-t 2SD882l-x-tm3-t to-251 b c e tube 2SD882-x-tn3-r 2SD882l-x-tn3-r to-252 b c e tape reel 2SD882-x-tn3-t 2SD882l-x-tn3-t to-252 b c e tube 2SD882-x-t9n-b 2SD882l-x-t9n-b to-92nl e c b tape box 2SD882-x-t9n-k 2SD882l-x-t9n-k to-92nl e c b bulk 2SD882l-x-t 60-r (1)packing type (2)package type (3)rank (4)lead plating (1) b: tape box, k: bulk, t: tube, r: tape reel (2) t60: to-126, t6c: to-126c, tm3: to-251, tn 3: to-252, t9n: to-92nl (3) x: refer to classification of h fe2 (4) l: lead free plating, blank: pb/sn
2SD882 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r209-003,c absolute maximum rating (ta=25
, unless otherwise specified ) parameter symbol ratings unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5 v dc i c 3 a collector current pulse i cp 7 a base current i b 0.6 a to-92nl 0.5 w collector dissipation ta=25
to-251/to-252/ to-126/to-126c p c 1 w junction temperature t j +150
storage temperature t stg -55 ~ +150
note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings onl y and functional device operat ion is not implied. electrical characteristics (ta=25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =100a, i e =0 40 v collector-emitter breakdown voltage bv ceo i c =1ma, i b =0 30 v emitter-base breakdown voltage bv ebo i e =100a, i c =0 5 v collector cut-off current i cbo v cb =30v, i e =0 1000 na emitter cut-off current i ebo v eb =3v, i c =0 1000 na h fe1 v ce =2v, i c =20ma 30 200 dc current gain (note 1) h fe2 v ce =2v, i c =1a 100 150 400 collector-emitter saturation voltage v ce(sat) i c =2a, i b =0.2a 0.3 0.5 v base-emitter saturation voltage v be(sat) i c =2a, i b =0.2a 1.0 2.0 v current gain bandwidth product f t v ce =5v, i c =0.1a 80 mhz output capacitance cob v cb =10v, i e =0, f=1mhz 45 pf note 1: pulse test: pw<300 s, duty cycle<2% classification of h fe2 rank q p e range 100-200 160-320 200-400
2SD882 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r209-003,c typical characteristics static characteristics collector-emitter voltage (v) collector current, ic (a) 04 812 1620 0 0. 4 0. 8 1. 2 1. 6 case temperature, t c ( ) derating curve of safe operating areas derating, i c (%) 200 150 100 50 0 -50 0 50 100 150 s / b l i m i t e d d i s s i p a t i o n l i m i t e d i b =9ma i b =8ma i b =7ma i b =6ma i b =5ma i b =4ma i b =3ma i b =2ma i b =1ma current gain-bandwidth product current gain- bandwidth product, f t (mhz) collector-emitter voltage collector current, i c (a) safe operating area i c (max), pulse 1 0 m s 1 m s 0 .1 m s collector current, ic (a) 10 3 10 2 10 1 10 0 10 -2 10 -1 10 0 10 1 10 1 10 0 10 -1 10 -2 10 0 10 1 10 2 i c (max), dc v ce =5v i b =8ma dc current gain collector current, i c (ma) collector current, i c (ma) saturation voltage dc current gain, h fe saturation voltage (mv) 10 3 10 2 10 1 10 0 10 0 10 1 10 3 10 4 v ce =2v 10 4 10 3 10 2 10 0 10 1 10 2 10 4 10 1 10 0 10 3 v be(sat) v ce(sat)
2SD882 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r209-003,c typical characteristics(cont.) collector output capacitance collector-base voltage (v) output capacitance (pf) 10 0 10 3 i e =0 f=1mhz 10 2 10 1 10 0 10 -1 10 -2 10 -3 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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